6/15/05 pa ckage outline p age 1 of 10 ?2005 fairchild semiconductor corporation phototransistor optocouplers h11av1-m h11av1a-m h11av2-m h11av2a-m description the general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6 -pin dual in-line white package. features h11av1 and h11av2 feature 0.3" input-output lead spacing h11av1a and h11av2a feature 0.4" input-output lead spacing ul recognized (file #e90700, vol. 2) vde recognized (file #102497) - add option v (e.g., H11AV1AV-M) applications ? ow er supply regulators digital logic inputs microprocessor inputs schematic pin 1. anode 2. cathode 3. no connection 4. emitter 5. collector 6. base 2 1 3nc 5 6 4 6 1 6 6 1 1 h11av1s-m, h11av2s-m h11av1-m, h11av2-m h11av1a-m, h11av2a-m
6/15/05 p age 2 of 10 ?2005 fairchild semiconductor corporation phototransistor optocouplers h11av1-m h11av1a-m h11av2-m h11av2a-m absolute maximum ratings (t a = 25? unless otherwise speci?d) p arameter symbol value units tot al device storage temperature t stg -40 to +150 ? operating temperature t opr -40 to +100 ? wa ve solder temperature (see page 9 for re?w solder pro?es) t sol 260 for 10 sec ? t otal device power dissipation @ t a = 25? derate above 25? p d 250 mw 2.94 mw/? emitter dc/average forward input current i f 60 ma reverse input voltage v r 6v led power dissipation @ t a = 25? derate above 25? p d 120 mw 1.41 mw/? detector collector-emitter voltage v ceo 70 v collector-base voltage v cbo 70 v emitter-collector voltage v eco 7v detector power dissipation @ t a = 25? derate above 25? p d 150 mw 1.76 mw/?
6/15/05 p age 3 of 10 ?2005 fairchild semiconductor corporation phototransistor optocouplers h11av1-m h11av1a-m h11av2-m h11av2a-m note * typical values at t a = 25? electrical characteristics (t a = 25? unless otherwise speci?d) individual component characteristics p arameter test conditions symbol min typ* max unit emitter input forward voltage (i f = 10 ma) t a = 25? v f 0.8 1.18 1.5 v t a = -55? 0.9 1.28 1.7 t a = 100? 0.7 1.05 1.4 reverse leakage current (v r = 6.0 v) i r 10 ? detector collector-emitter breakdown voltage (i c = 1.0 ma, i f = 0) bv ceo 70 100 v collector-base breakdown voltage (i c = 100 ?, i f = 0) bv cbo 70 120 v emitter-collector breakdown voltage (i e = 100 ?, i f = 0) bv eco 710 v collector-emitter dark current (v ce = 10 v, i f = 0) i ceo 1 50 na collector-base dark current (v cb = 10 v) i cbo 0.5 na capacitance (v ce = 0 v, f = 1 mhz) c ce 8pf isolation characteristics characteristic test conditions symbol min typ* max units input-output isolation voltage (f = 60 hz, t = 1 sec) v iso 7500 vac(pk) isolation resistance (v i-o = 500 vdc) r iso 10 11 ? isolation capacitance (v i-o = 0 v, f = 1 mhz) c iso 0.2 2 pf
6/15/05 p age 4 of 10 ?2005 fairchild semiconductor corporation phototransistor optocouplers h11av1-m h11av1a-m h11av2-m h11av2a-m * typical values at t a = 25? transfer characteristics (t a = 25? unless otherwise speci?d.) dc characteristic test conditions symbol device min typ* max unit current transfer ratio, collector to emitter (i f = 10 ma, v ce = 10 v) ctr h11av1 h11av1a 100 300 % h11av2 h11av2a 50 collector-emitter saturation voltage (i c = 2 ma, i f = 20 ma) v ce (sat) all 0.4 v ac characteristic non-saturated tu r n-on time (i c = 2 ma, v cc = 10 v, r l = 100 ? ) (fig. 11) t on all 15 ? non saturated tu r n-off time (i c = 2 ma, v cc = 10 v, r l = 100 ? ) (fig. 11) t on all 15 ?
6/15/05 p age 5 of 10 ?2005 fairchild semiconductor corporation phototransistor optocouplers h11av1-m h11av1a-m h11av2-m h11av2a-m typical performance curves fig. 2 normalized ctr vs. forward current i f - forward current (ma) 024681012 14 16 18 20 nor malized ctr 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ce = 5.0v t a = 25 c normalized to i f = 10 ma fig. 3 normalized ctr vs. ambient temperature t a - ambient temperature ( c) -60 -40 -20 0 20 40 60 80 100 normalized ctr 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i f = 5 ma i f = 10 ma i f = 20 ma normalized to i f = 10 ma t a = 25 c i f - led forward current (ma) v f - forward voltage (v) fig. 1 led forward voltage vs. forward current 110 100 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 t a = 25 c t a = -55 c t a = 100 c fig. 5 ctr vs. rbe (saturated) r be - base resistance (k ?) normalized ctr ( ctr rbe / ctr rbe(open) ) 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 i f = 20 ma i f = 10 ma i f = 5 ma v ce = 0.3 v fig. 4 ctr vs. rbe (unsaturated) r be - base resistance (k ?) normalized ctr ( ctr rbe / ctr rbe(open) ) 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v ce = 5.0 v i f = 20 ma i f = 10 ma i f = 5 ma 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 i f = 5 ma i f = 20 ma i f = 10 ma fig. 6 collector-emitter saturation voltage vs collector current i c - collector current (ma) v ce (sat) - collector-emitter saturation voltage (v) i f = 2.5 ma t a = 25 ?c
6/15/05 p age 6 of 10 ?2005 fairchild semiconductor corporation phototransistor optocouplers h11av1-m h11av1a-m h11av2-m h11av2a-m normalized t on - (t on(r be ) / t on(open) ) fig. 8 normalized t on vs. r be r be - base resistance (k ?) 10 100 1000 10000 100000 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v cc = 10 v i c = 2 ma r l = 100 ? switching speed - ( s) fig. 7 switching speed vs. load resistor r-load resistor (k ?) 0.1 1 10 100 0.1 1 10 100 1000 t off i f = 10 ma v cc = 10 v t a = 25 c t r t on t f 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v cc = 10 v i c = 2 ma r l = 100 ? normalized t off - (t off(r be ) / t off(open) ) 10 100 1000 10000 100000 r be - base resistance (k ?) fig. 9 normalized t off vs. r be fig. 10 dark current vs. ambient temperature t a - ambient temperature ( c) 0204 06080 100 i ceo - collector -emitter dark current (na) 0.001 0.01 0.1 1 10 100 1000 10000 v ce = 10 v t a = 25 c output pulse input pulse test circuit wa ve forms t r t f input i f r l r be v cc = 10v output t on 10% 90% t off figure 11. switching time test circuit and waveforms i c adjust i f to produce i c = 2 ma
6/15/05 p age 7 of 10 ?2005 fairchild semiconductor corporation phototransistor optocouplers h11av1-m h11av1a-m h11av2-m h11av2a-m note all dimensions are in inches (millimeters) pa ck ag e dimensions (through hole) pa ck ag e dimensions (surface mount) pa ck ag e dimensions (0.4 lead spacing) recommended pad layout for surface mount leadform 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.320 (8.13) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 (2.54) 15 0.012 (0.30) pin 1 id seating plane 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.390 (9.90) 0.332 (8.43) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.320 (8.13) 0.035 (0.88) 0.012 (0.30) 0.012 (0.30) 0.008 (0.20) 0.200 (5.08) 0.115 (2.93) 0.025 (0.63) 0.020 (0.51) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] seating plane pin 1 id 0.350 (8.89) pin 1 id 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.070 (1.77) seating plane 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.100 (2.54) 0.015 (0.38) 0.012 (0.30) 0.008 (0.21) 0.425 (10.80) 0.400 (10.16) 0.070 ( 1.78 ) 0.060 ( 1.52 ) 0.030 ( 0.76 ) 0.100 ( 2.54 ) 0.305 ( 7.75 ) 0.425 ( 10.79 )
6/15/05 p age 8 of 10 ?2005 fairchild semiconductor corporation phototransistor optocouplers h11av1-m h11av1a-m h11av2-m h11av2a-m ordering information marking information order entry identi?r order entry identi?r option example s surface mount lead bend h11av1s-m sr2 surface mount; tape and reel h11av1sr2-m n/a 0.4" lead spacing h11av1a-m v vde 0884 h11av1v-m n/a vde 0884, 0.4" lead spacing H11AV1AV-M sv vde 0884, surface mount h11av1sv-m sr2v vde 0884, surface mount, tape & reel h11av1sr2v-m h11av1 v x yy q white package 1 2 6 4 3 5 *note ?parts built in the white package (m suf?) that do not have the ? option (see de?ition 3 above) that are marked with date code ?25 or earlier are marked in the portrait format. de?itions 1f airchild logo 2d e vice number 3 vde mark (note: only appears on parts ordered with vde option ?see order entry table) 4 one digit year code ? one digit for white package parts, e.g., ? 5t wo digit work week ranging from ?1 to ?3 6 assembly package code
6/15/05 p age 9 of 10 ?2005 fairchild semiconductor corporation phototransistor optocouplers h11av1-m h11av1a-m h11av2-m h11av2a-m re?w pro?e carrier tape specifications 4.0 0.1 1.5 min user direction of feed 2.0 0.05 1.75 0.10 11.5 1.0 24.0 0.3 12.0 0.1 0.30 0.05 21.0 0.1 4.5 0.20 0.1 max 10.1 0.20 9.1 0.20 1.5 0.1/-0 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 c time (s) 0 60 180 120 270 260 c >245 c = 42 sec time above 183 c = 90 sec 360 1.822 c/sec ramp up rate 33 sec
6/15/05 life support policy fairchild? products are not authorized for use as critical components in life support devices or systems without the express written approval of the president of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. p age 10 of 10 ?2005 fairchild semiconductor corporation phototransistor optocouplers h11av1-m h11av1a-m h11av2-m h11av2a-m
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